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    MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 20 V Average Rectified Forward Current (At Rated VR, TC = 130 ?C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135 ?C) IFRM 2.0 A Non?Repetitive Peak Surge Current (Non?Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg ?65 to 150 ?C Operating Junction Temperature TJ ?65 to 150 ?C Voltage Rate of Change (Rated VR, TJ = 25 ?C) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance ? Junction ?to?Lead (Anode) (Note 1) Thermal Resistance ? Junction ?to?Tab (Cathode) (Note 1) Thermal Resistance ? Junction ?to?Ambient (Note 1) R R tjl R tjtab tja 35 23 277 ?C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 VF TJ = 25 ?C TJ = 100 ?C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.455 0.530 0.595 0.360 0.455 0.540 Maximum Instantaneous Reverse Current (Note 2), See Figure 4 IR TJ = 25 ?C TJ = 100 ?C A (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 10 1.0 0.5 1600 500 300 2. Pulse Test: Pulse Width ? 250 s, Duty Cycle ? 2%. |